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Crystal growth and quantum oscillations in the topological chiral semimetal CoSi

  • Author(s): Xu, X
  • Wang, X
  • Cochran, TA
  • Sanchez, DS
  • Chang, G
  • Belopolski, I
  • Wang, G
  • Liu, Y
  • Tien, HJ
  • Gui, X
  • Xie, W
  • Hasan, MZ
  • Chang, TR
  • Jia, S
  • et al.
Abstract

© 2019 American Physical Society. We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.

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