Skip to main content
eScholarship
Open Access Publications from the University of California

Crystal growth and quantum oscillations in the topological chiral semimetal CoSi

  • Author(s): Xu, X;
  • Wang, X;
  • Cochran, TA;
  • Sanchez, DS;
  • Chang, G;
  • Belopolski, I;
  • Wang, G;
  • Liu, Y;
  • Tien, HJ;
  • Gui, X;
  • Xie, W;
  • Hasan, MZ;
  • Chang, TR;
  • Jia, S
  • et al.
Abstract

We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View